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    • Samsung Develops Revolutionary New Memory Chip - PRAM
      The phase-change random access memory, or PRAM, chip is nonvolatile, meaning it will retain data even when an electronic device is turned off, and is about 30 times faster than conventional flash memory


    • Samsung SVP T. S. Jung and Three Other Samsung Memory Experts to Speak at MemCon 2006
      San Jose - SAN JOSE -- Dr. Tae-Sung (T. S.) Jung, senior vice president at Samsung Electronics Company (SEC) and three senior executives from Samsung Semiconductor will speak at the MemCon 2006 Conference and Exposition on September 12-14 at the Santa Clara (CA) Convention Center.


    • Samsung 64GB NAND flash memory
      Samsung Electronics announced that it has developed the industry?s first 40-nanometer (nm) memory device. The Samsung 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance. The new CTF-based NAND 32GB flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm. The 32Gb CTF memory was announced at the Samsung press conference in Seoul.


    • Samsung develops new memory chip - PRAM
      Samsung Electronics Co. on Monday unveiled a new type of memory chip that it said will allow digital devices to work faster by saving new data more quickly. The phase-change random access memory, or PRAM, chip is nonvolatile, meaning it will retain data even when an electronic device is turned off, and is about 30 times faster than conventional flash memory, Samsung said. It is expected to be available in 2008, Samsung said. A 512-megabit prototype PRAM device was unveiled at a news conference in Seoul on Monday. Samsung said the PRAM chips use vertical diodes and a three-dimensional transistor structure to create a small cell size. Unlike NOR and NAND chips, they don't need to first erase any old data in a separate step before storing any new data, it said.


    • Samsung Develops New Memory Chip: PRAM Promised to be 30 Times Faster
      Samsung on Monday unveiled a new type of memory chip that it said will allow digital devices to work faster by saving new data more quickly. The phase-change random access memory, or PRAM, chip is nonvolatile, meaning it will retain data even when an electronic device is turned off, and is about 30 times faster than conventional flash memory.


    • Samsung First to Mass-produce 1Gb DDR2 Memory with 80nm Process Technology
      Samsung Electronics, the world leader in advanced memory technology, announced today mass production of 1Gigabit (Gb) DDR2 DRAM memory using 80 nanometer (nm) process technology. While monolithic 1Gb DDR2 is available today, it is produced with more costly and less efficient 90 nm technology.




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