Latest random access memory Weblinks:
- Random access memory including selective activation of select line
A random access memory that includes an array of memory cells, a first circuit configured to receive an address to address memory cells in the array of memory cells, and a second circuit. The second circuit is configured to obtain control signals including an address strobe signal and gate the...- Taiwanese DRAM firms set up LED venture
Promos Technologies, which specializes in making dynamic random access memory chips, has decided that now is the time to get involved in the LED business. In a bid to compete in the LED market, two Taiwanese companies from the mainstream silicon semiconductor business have established a joint venture company. Promos, a maker of dynamic random access memory (DRAM) chips, and equipment vendor Hermes-Epitek have raised NT$550million ($16.- Mattson Technology Reinforces DRAM Leadership With Largest Order in Company History From Leading Taiwanese Memory Manufacturer
Mattson Technology, Inc. , a leading supplier of advanced process equipment used to manufacture semiconductors, today announced that it has received the largest order in the company's history from one of Taiwan's leading memory manufacturers. The selected systems include the Aspen III ICPHT strip and Helios rapid thermal processing (RTP) tools. Shipments begin in the current quarter and extend through the end of the year. The systems will be used in the chipmaker's newest 300 millimeter (mm) fab for the production of its advanced dynamic random access memory (DRAM) devices at the 90 nanometer (nm) technology node and below. This order marks the latest in the series of Mattson wins from major Taiwanese memory manufacturers, expanding the company's large installed base in the region and further reinforcing its leadership in the DRAM market.- Samsung develops new memory chip - PRAM
Samsung Electronics Co. on Monday unveiled a new type of memory chip that it said will allow digital devices to work faster by saving new data more quickly. The phase-change random access memory, or PRAM, chip is nonvolatile, meaning it will retain data even when an electronic device is turned off, and is about 30 times faster than conventional flash memory, Samsung said. It is expected to be available in 2008, Samsung said. A 512-megabit prototype PRAM device was unveiled at a news conference in Seoul on Monday. Samsung said the PRAM chips use vertical diodes and a three-dimensional transistor structure to create a small cell size. Unlike NOR and NAND chips, they don't need to first erase any old data in a separate step before storing any new data, it said.- Ramtron to Showcase Line of Automotive FRAM Memory Parts at Convergence 2006 in Detroit, Michigan
Ramtron International Corporation(NASDAQ: RMTR), a leading developer and supplier of nonvolatileferroelectric random access memory (FRAM) and integrated semiconductorproducts, today announced plans to exhibit at Convergence 2006 (booth 201)from October 16 to 18 in Detroit, Michigan, where it will preview its lineof FRAM devices to be qualified for AEC Q100.- Method and apparatus for providing flexible modular redundancy allocation for memory built in self test of sram with redundancy
A method and apparatus for providing flexible modular redundancy allocation for memory built in self test of random access memory with redundancy. The apparatus includes a first redundancy support register that includes inputs for receiving an address of a location in memory under test and data relating to must fix...- Taiwanese DRAM firm sets up LED venture
ProMOS Technologies, which specializes in making dynamic random access memory chips, decides that now is the time to get involved in the LED business. In a bid to make a play in the LED market, two Taiwanese companies from the mainstream silicon semiconductor business have set up a new joint venture company. ProMOS Technologies, a maker of dynamic random access memory (DRAM) chips, and equipment vendor Hermes-Epitek have raised NT$550 million ($16.
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