Latest process memory Weblinks:
- Method, apparatus, and computer program product in a processor for concurrently sharing a memory controller among a tracing process and non-tracing processes using a programmable variable number of shared memory write buffers
A method, apparatus, and computer program product are disclosed for, in a processor, concurrently sharing a memory controller among a tracing process and non-tracing processes using a programmable variable number of shared memory write buffers. A hardware trace facility captures hardware trace data in a processor. The hardware trace facility...- Intel Wi-Fi Proset software v10.5 hogs PC memory
A software update for Intel wireless hardware is faulty and can hog PC memory, Intel acknowledged Thursday. A fix is due on Friday. The problem affects the Intel PROSet software version 10.5, Amy Martin, an Intel spokeswoman, said. The PROSet software accompanies Intel's drivers that run the company's wireless hardware on PCs. "One of the processes used by the Intel PROSet software was not releasing the (file) handles correctly, which caused more and more memory to be used by the process," Martin said. As a result, a PC slows down, she said. Intel has made a fix available to PC makers and plans to post it to the Intel Web site on Friday, Martin said.- Silterra produces OTP memory on 0.18-micron process for eMemory
Taiwan-based intellectual property (IP) design house eMemory and Silterra Malaysia have announced that one-time-programmable (OTP) memory fabricated on Silterra's 0.18-micron CMOS process is now available, and the companies expect to extend the partnership to 0.13 micron in the fourth quarter.- Method and structure for metal-insulator-metal capacitor based memory device
A process for integrally fabricating a memory cell capacitor and a logic device is disclosed. A first conductive layer and second conductive layer are formed above a semiconductor substrate with a logic region and memory cell region. A first photoresist layer is formed to cover the logic region, and expose...- Samsung First to Mass-produce 1Gb DDR2 Memory with 80nm Process Technology
Samsung Electronics, the world leader in advanced memory technology, announced today mass production of 1Gigabit (Gb) DDR2 DRAM memory using 80 nanometer (nm) process technology. While monolithic 1Gb DDR2 is available today, it is produced with more costly and less efficient 90 nm technology.- Re: how to get physical memory address from virtual memory address
This is not a task that should be performed by the user-level process. You can't for example test the memory which is permanently mapped by kernel (which user-level process is not allowed to access). For memory diagnostics, tools specifically crafted for such tasks should be used (such as memtest86).- Samsung 64GB NAND flash memory
Samsung Electronics announced that it has developed the industry?s first 40-nanometer (nm) memory device. The Samsung 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance. The new CTF-based NAND 32GB flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm. The 32Gb CTF memory was announced at the Samsung press conference in Seoul.
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